JPH0432152B2 - - Google Patents

Info

Publication number
JPH0432152B2
JPH0432152B2 JP60154062A JP15406285A JPH0432152B2 JP H0432152 B2 JPH0432152 B2 JP H0432152B2 JP 60154062 A JP60154062 A JP 60154062A JP 15406285 A JP15406285 A JP 15406285A JP H0432152 B2 JPH0432152 B2 JP H0432152B2
Authority
JP
Japan
Prior art keywords
substrate
target
strainer
flat plate
magnetron sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60154062A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6217173A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15406285A priority Critical patent/JPS6217173A/ja
Publication of JPS6217173A publication Critical patent/JPS6217173A/ja
Publication of JPH0432152B2 publication Critical patent/JPH0432152B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
JP15406285A 1985-07-15 1985-07-15 平板マグネトロンスパツタ装置 Granted JPS6217173A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15406285A JPS6217173A (ja) 1985-07-15 1985-07-15 平板マグネトロンスパツタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15406285A JPS6217173A (ja) 1985-07-15 1985-07-15 平板マグネトロンスパツタ装置

Publications (2)

Publication Number Publication Date
JPS6217173A JPS6217173A (ja) 1987-01-26
JPH0432152B2 true JPH0432152B2 (en]) 1992-05-28

Family

ID=15576067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15406285A Granted JPS6217173A (ja) 1985-07-15 1985-07-15 平板マグネトロンスパツタ装置

Country Status (1)

Country Link
JP (1) JPS6217173A (en])

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0660391B2 (ja) * 1987-06-11 1994-08-10 日電アネルバ株式会社 スパッタリング装置
US5133849A (en) * 1988-12-12 1992-07-28 Ricoh Company, Ltd. Thin film forming apparatus
US5635036A (en) * 1990-01-26 1997-06-03 Varian Associates, Inc. Collimated deposition apparatus and method
US6521106B1 (en) * 1990-01-29 2003-02-18 Novellus Systems, Inc. Collimated deposition apparatus
JP2725944B2 (ja) * 1991-04-19 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 金属層堆積方法
CA2061119C (en) * 1991-04-19 1998-02-03 Pei-Ing P. Lee Method of depositing conductors in high aspect ratio apertures
JPH04371578A (ja) * 1991-06-19 1992-12-24 Sony Corp マグネトロンスパッタリング装置
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
JP2755138B2 (ja) * 1993-12-15 1998-05-20 日本電気株式会社 スパッタ装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601397A (ja) * 1983-06-17 1985-01-07 Toyoda Autom Loom Works Ltd 圧縮容量可変型圧縮機

Also Published As

Publication number Publication date
JPS6217173A (ja) 1987-01-26

Similar Documents

Publication Publication Date Title
KR0148007B1 (ko) 반도체 웨이퍼의 스퍼터 코팅 장치 및 방법
US5298136A (en) Steered arc coating with thick targets
EP0187226B1 (en) Sputtering apparatus with film forming directivity
TWI224149B (en) Thin-film formation system and thin-film formation process
CN102066603B (zh) 用于均匀沉积的装置和方法
US4610774A (en) Target for sputtering
US20090308739A1 (en) Wafer processing deposition shielding components
KR102374073B1 (ko) 웨이퍼 프로세싱 증착 차폐 부품
KR20010042128A (ko) 2축으로 텍스처된 코팅의 침착 방법 및 장치
JPH0432152B2 (en])
JPH03177569A (ja) スパッタ装置
KR950000011B1 (ko) 마그네트론 스패터링장치 및 박막형성방법
JP3336421B2 (ja) スパッタリング装置
JPH0692632B2 (ja) 平板マグネトロンスパッタリング装置
JP3808148B2 (ja) 複合スパッタリングカソード、そのカソードを用いたスパッタリング装置
JP2902822B2 (ja) プレーナ形マグネトロンスパッタ電極
JPH0693442A (ja) マグネトロン・スパッタカソード
JPH05202471A (ja) マグネトロンスパッタリング装置
KR100963413B1 (ko) 마그네트론 스퍼터링 장치
JP2580149B2 (ja) スパツタ装置
JP2789251B2 (ja) ダイポールリング型磁気回路を用いたスパッタ装置
KR100205682B1 (ko) 피복두께의 균일성, 스텝 커버리지 및 스텝 커버리지의 균일성을 만드는 평탄 마그네트론 스퍼터링 공급원
JPH027870Y2 (en])
JPS62263966A (ja) マグネトロンスパツタ方法
JPS62263965A (ja) マグネトロンスパツタ方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees